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mil - prf - 19500/391g 15 july 2002 superseding mil - prf - 19500/391f 26 march 2001 performance specification semic onductor device, transistor, npn, silicon, low - power types 2n3019, 2n3019s, 2n3057a, 2n3700, and 2n3700ub jan, jantx, jantxv, jans, janhc2n3700 and jankc2n3700 this specification is approved for use by all departments and agencies of the department of d efense. 1. scope 1.1 scope . this specification covers the performance requirements for npn, silicon, low - power transistors. four levels of product assurance are provided for each device type as specified in mil - prf - 19500. two levels of product assur ance are provided for the unencapsulated device type 2n3700. 1.2 physical dimensions . see figure 1, 2n3019 (to - 5), 2n3019s (similar to to - 39), figure 2, 2n3057a (to - 46), figure 3, 2n3700 (to - 18), figure 4, 2n3700ub, and figure 5, janhca2n3700,.and jankc a2n3700. 1.3 maximum ratings . type p t v cbo v ebo v ceo i c t j and t stg r q ja t a = +25 c t c = +25 c (1) w w v dc v dc v dc a dc c c/w 2n3019 0.8 (2) 5 140 7 80 1 - 65 to +200 175 2n3019s 0.8 (2) 5 140 7 80 1 - 65 to +200 175 2n3057a 0.5 (3) 1.8 140 7 80 1 - 65 to +200 325 2n3700 0.5 (3) 1.8 140 7 80 1 - 65 to +200 325 2n3700ub 0.5 (3) 1.16 140 7 80 1 - 65 to +200 325 (1) derate linearly at 28.6 mw/ c for types 2n3019 and 2n3019s; 10.3 mw/ c for types 2n3057a and 2n3700 ; 6.63 mw/ c for 2n3700ub, for t c 3 +25 c. (2) derate linearly at 5.7 mw/ c above t a = +60 c. (3) derate linearly at 3.08 mw/ c above t a = +37.5 c. amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. inch - pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 15 october 2002 . beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: defense supply center columbus, attn: dscc - vac, p.o. box 3990, columbus, oh 43216 - 5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this d ocument or by letter.
mil - prf - 19500/391g 2 1.4 primary electrical characteristics . limits h fe1 h fe2 h fe3 (1) |h fe | v ce(sat)1 (1) v ce = 10 v dc i c = 150 ma d c v ce = 10 v dc i c = 0.1 ma dc v ce = 10 v dc i c = 10 ma dc v ce = 10 v dc i c = 50 ma dc f = 20 mhz i c = 150 ma dc i b = 15 ma dc v dc min 100 50 90 5 max 300 200 20 0.20 (1) pulsed (see 4.5.1). 2. applicable documents 2.1 general . the d ocuments listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the d epartment of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil - prf - 19500 - semiconductor devices, general specification for. standard departm ent of defense mil - std - 750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dp m - dodssp), 700 robbins avenue, philadelphia, pa 19111 - 5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. nothing in this document, h owever, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil - prf - 19500/391g 3 dimensions symbol inches millimeters notes cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7, 8 ll see notes 7, 8, 11, 12 lu .016 .019 0.41 0.48 7, 8 l1 .050 1.27 7, 8 l2 .250 6.35 7, 8 p .100 2.54 5 q .050 1.27 r .010 0.25 10 tl .029 .045 0.74 1.14 4 tw .028 .034 0.71 0.86 3 a 45 tp 45 tp 6 figure 1. physical dimensions for device types 2n3019 (to - 5) and 2n3019s (to - 39) .
mil - prf - 19500/391g 4 notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 i nch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is unco ntrolled in l 1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. for transistor type 2n3019, dimension ll shall be 1.5 inches (38.1 mm) minimum and 1 .75 inches (44.4 mm) maximum. 12. for transistor type 2n3019s, dimension ll shall be .5 inch (12.7 mm) minimum and .75 inch (19.0 mm) maximum. 13. in accordance with ansi y14.5m, diameters are equivalent to f x symbology. 14. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 1. physical dimensions for device types 2n3019 (to - 5) and 2n3019s (to - 39) - continued.
mil - prf - 19500/391g 5 dimensions symbol inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .2 09 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7 ll .500 1.750 12.70 44.45 7 lu .016 .019 0.41 0.48 7 l1 .050 1.27 7 l2 .250 6.35 7 tl .028 .048 0.71 1.22 3 tw .036 .046 0.91 1.17 2 r .007 0.18 10, 11 a 45 tp 45 tp 6 no tes: 1. dimensions are in inches. metric equivalents are given for general information only. 2. beyond r (radius) maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 3. dimension tl measured from maximum hd. 4. leads at gauge plane .054 +.001 - . 000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 5. dimension lu applies between l 1 a nd l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 6. all three leads. 7. the collector shall be internally connected to the case. 8. dimension r (radius) applies to both inside corners of tab. 9. in accordan ce with ansi y14.5m, diameters are equivalent to f x symbology. 10. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 2. physical dimensions for 2n3057a (to - 46) .
mil - prf - 19500/391g 6 dimensions symbol inches millimeters notes cd .178 .195 4.52 4.95 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 5 ld .016 .021 0.41 0.53 6, 7 ll .500 .750 12.70 19.05 6, 7 lu .016 .019 0.41 0.48 6, 7 l1 .050 1.27 6, 7 l2 .250 6.35 6, 7 q .040 1.02 4 r .010 0.25 9 tl .028 .04 8 0.71 1.22 3 tw .036 .046 0.91 1.17 2 a 45 tp 45 tp 5 figure 3. physical dimensions for type 2n3700 (to - 18) .
mil - prf - 19500/391g 7 notes: 1. dimensions are in inches. metric equivalents are given for general information only. 2. beyond r (radius) maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 3. dimension tl measured from maximum hd. 4. body contour optional within zone defined by hd, cd, and q. 5. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 6. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 an d beyond ll minimum. 7. all three leads. 8. the collector shall be internally connected to the case. 9. dimension r (radius) applies to both inside corners of tab. 10. in accordance with ansi y14.5m, diameters are equivalent to f x symbology. 11. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 3. physical dimensions for type 2n3700 (to - 18) - continued.
mil - prf - 19500/391g 8 dimensions symbol inches millimeters min max min max a .046 .056 0.97 1.42 a1 .017 .035 0.43 0.89 b1 .016 .024 0.41 0.61 b2 .016 .024 0.41 0.61 b3 .016 .024 0.41 0.61 d .085 .108 2.41 2.74 d1 .071 .079 1.81 2.01 d2 .035 .039 0.89 0.99 d3 .085 .108 2.41 2.74 e .115 .128 2.82 3.25 e3 .128 3.25 l1 .022 .038 0.56 0.96 l2 .022 .038 0.56 0.96 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 4. physical dimensions, surface mount (2n3700ub) .
mil - prf - 19500/391g 9 die size: .030 x .030 inch (0.762 x 0.762 mm). die th ickness: .008 .0016 inch (0.2032 mm 0.04064 mm). base pad: .004 x .010 inch (0.1016 mm x 0.254 mm). emitter pad: .0023 x .007 inch (0.05842 mm x 0.1778 mm). back metal: gold, 6500 1950 ang. top metal: aluminum, 12,000 ang. minimum; 14,500 ang. nominal. back side: collector. glassivation: sio 2 , 7500 1500 ang. figure 5. janhca2n3700 and jankca2n3700 die dimensions .
mil - prf - 19500/391g 10 3. requirements 3.1 general . the requirements for acquiring the product described herein shall consist of this document and mil - p rf - 19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (qml) before contract aw ard (see 4.2 and 6.4). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil - prf - 19500. 3.4 interface and physical dimensions . interface and physical dimensions shall be as spe cified in mil - prf - 19500, and on figure 1 (2n3019, to - 5, 2n3019s, to - 39), figure 2 (2n3057a, to - 46), figure 3 (2n3700, to - 18), figure 4 (2n3700ub, surface mount) and figure 5 (janhca2n3700, jankca2n3700) herein. 3.4.1 lead finish . lead finish shall be solderable in accordance with mil - prf - 19500, mil - std - 750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i. 3.6 electrical test requirements . the electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.7 marking . marking shall be in accordanc e with mil - prf - 19500, except for the ub suffix package. marking on the ub package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. the prefixes jan, jantx, jantxv, and jans can be abbreviated as j, jx, jv, and js respectively. the "2n" prefix can also be omitted. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification i nspection . qualification inspection shall be in accordance with mil - prf - 19500 and as specified herein. * 4.2.1 group e qualification . group e qualification shall be performed herein for qualification or requalification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table ii tests, the tests specified in table ii herein shall be performed by the first inspection lot to this revision to maintain qualification. * 4.2.2 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil - prf - 19500.
mil - prf - 19500/391g 11 * 4.3 screening (jantx, jantxv, and jans only) . screening shall be in accordance with table iv of mil - prf - 19500, and as specified herei n. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of measurement mil - prf - 19500) jans jantx and jantxv levels 3c thermal impedance (see 4.3.1). thermal impedance (see 4.3.1). 9 i ces1 and h fe1 not applicable 10 48 hours minimum 48 hours minimum 11 i ces1 ; h fe1 ; d i ces1 = 100 percent of initial value or 5 na dc, whichever is greater; d h fe1 = 15 percent. i ces1 and h fe1 12 see 4.3.2 see 4.3.2 13 subgroups 2 & 3 of table i herein; d i ces1 = 100 percent of initial value or 5 na dc, whichever is greater; d h fe1 = 15 percent. subgroup 2 of table i herein; d i ces1 = 100 percent of initial value or 5 na dc, wh ichever is greater; d h fe1 = 15 percent. 4.3.1 thermal impedance (z q jx measurements) . the z q jx measurements shall be performed in accordance with method 3131 of mil - std - 750. a. i m measurement current .................. 5 ma. b. i h forward heating current ................ 200 ma ( min). c. t h heating time ................................ . 25 - 30 ms. d. t md measurement delay time .......... 60 m s max. e. v ce collector - emitter voltage .......... 10 v dc minimum. the maximum limit for z q jx under these test conditions are z q jx (max) = 3 5 c/w. 4.3.2 power burn - in conditions . powe r burn - in conditions are as follows: t a = room ambient as defined in the general requirements of 4.5 of mil - std - 750. v cb = 10 - 30 v dc, power shall be applied to achieve t j = +135 c minimum and minimum power dissipation of p d = 75 percent of maximum ra ted p t as defined in 1.3. 4.4 conformance inspection . conformance inspection shall be in accordance with mil - prf - 19500, and as specified herein. if alternate screening is being performed in accordance with e.5.3.1d of mil - prf - 19500, a sample of scree ned devices shall be submitted to and pass the requirements of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2).
mil - prf - 19500/391g 12 4.4.1 group a inspecti on. group a inspection shall be conducted in accordance with mil - prf - 19500, and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (ja ns) of mil - prf - 19500 and 4.4.2.1 herein. electrical measurements (end - points) shall be in accordance with group a, subgroup 2. delta requirements shall be in accordance with the steps of table iii herein as specified in the notes for table iii. see 4.4. 2.2 herein for jan, jantx, and jantxv group b testing. electrical measurements (end - points) for jan, jantx, and jantxv shall be after each step in 4.4.2.2 and shall be in accordance with table i, group a, subgroup 2. delta requirements shall be in accord ance with the steps of table iii herein as specified in the notes for table iii. * 4.4.2.1 group b inspection, table via (jans) of mil - prf - 19500 . subgroup method condition b4 1037 v cb = 10 v dc, 2,000 cycles. b5 1027 note: if a failure occurs, resu bmission shall be at the test conditions of the original sample. v cb = 10 v dc, p d 3 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum, sample size in accordance with mil - prf - 19500, table via, adjus t t a or p d to achieve t j = +275 c minimum. option 2: 216 hours minimum, sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum. b5 2037 test condition a. b6 not applicable. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. for rules on resubmission for failed steps, see mil - prf - 19500 rules on resubm ission of failed subgroups. step method condition 1. 1039 steady - state life: test condition b, 340 hours, v cb = 10 - 30 v dc. n = 45 devices, c = 0. power shall be applied to the device to achieve a t j = +150 c minimum and a minimum power dissipation p d = 75 percent of max rated p t as defined in 1.3 herein. 2. 1039 steady - state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b, step 2 shall not be required more than once for any single wafer lot. n = 45 devices, c = 0. 3. 1032 high - temperature life (non - operating), t a = +200 c n = 22, c = 0.
mil - prf - 19500/391g 13 4.4.2.3 group b sample selection . samples selected from group b inspect ion shall meet all of the following requirements: a. for jan, jantx and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil - prf - 19500. b. must be chosen from an inspection lot that has been submitted to and passed table i, group a, subgroup 2 conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (table via, subgroups b4 and b5 for jans, and table vib, group b for jan, jantx and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection . group c inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil - prf - 19500, and in 4.4.3.1 herein (jans). see 4.4.3.2 herein for jan, jantx, and jantxv group c testing. electrical measurements (end - points) shall be in accordance with tab le i, group a, subgroup 2. delta requirements shall be in accordance with the steps of table iii herein as specified in the notes for table iii . 4.4.3.1 group c inspection, table vii (jans) of mil - prf - 19500. subgroup method condition c2 2036 tes t condition e; not applicable for ub devices. c6 1026 steady - state life: test condition b, 1,000 hours, v cb = 10 - 30 v dc. n = 45 devices, c = 0. power shall be applied to the device to achieve a t j = +150 c minimum and a minimum power dissipation p d = 75 percent of max rated p t as defined in 1.3 herein. * 4.4.3.2 group c inspection, (jan, jantx, and jantxv) , table vii of mil - prf - 19500 . subgroup method condition c2 2036 test condition e; not appli cable for ub devices. c5 3131 see 4.5.3, r q jc . c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead finish procure d to the same specification which is submitted to and passes table i, group a tests for conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. delta requirements shall be in accordance with the ste ps of table iii herein as specified in the notes for table iii. * 4.4.4 group e inspection . group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix e, table ix of mil - prf - 19500 and as specified herein. electrical measurements (end - points) shall be in accordance with table i, subgroup 2 herein. delta requirements shall be in accordance with the steps of table iii herein as specified in the notes for table iii. 4.5 method of inspection . methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil - std - 750.
mil - prf - 19500/391g 14 4.5.2 collector - base time constant . this parameter may be d etermined by applying an rf signal voltage of 1.0 volt (rms) across the collector - base terminals, and measuring the ac voltage drop (v eb ) with a high - impedance rf voltmeter across the emitter - base terminals. with f = 79.8 mhz used for the 1.0 volt signa l, the following computation applies: r' b , c c(ps) = 2 x v eb (millivolts) * 4.5.3 thermal resistance . thermal resistance measurements shall be conducted in accordance with test method 3131 of mil - std - 750. the following details shall apply: a. collector current magnitude during power application shall be 0.15 a dc. b. collector to emitter voltage magnitude shall be 20 v dc. c. reference temperature measuring point shall be the case. d. reference point temperature shall be +25 c t r +35 c. the chosen reference temperature shall be recorded before the test is started. e. mounting arrangements shall be with heat sink to case. f. maximum r q jc limit shall be 35 c/w.
mil - prf - 19500/391g 15 table i. group a inspection . inspection 1 / mil - std - 750 sy mbol limit unit method conditions min max subgroup 1 2 / visual and mechanical 3 / examination 2071 n = 45 devices, c = 0 solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 hermetic seal 4 / 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements 4 / group a, subgroup 2 bon d strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0 subgroup 2 collector to base cutoff current 3036 bias condition d; v cb = 140 v dc i cbo1 10 m a dc emitter to base cut off current 3061 bias condition d; v eb = 7 v dc i ebo1 10 m a dc collector to emitter breakdown voltage 3011 bias condition d; i c = 30 ma dc pulsed (see 4.5.1) v (br)ceo 80 v dc collector to emitter cutoff current 3041 bias condition c; v ce = 90 v dc i ces1 10 na dc emitter to base cutoff current 3061 bias condition d; v eb = 5 v dc i ebo2 10 na dc forward current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed (see 4.5.1) h fe1 100 300 forward current transfer rat io 3076 v ce = 10 v dc; i c = 0.1 ma dc; pulsed (see 4.5.1) h fe2 50 200 see footnotes at end of table.
mil - prf - 19500/391g 16 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 2 ? con tinued forward current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc; pulsed (see 4.5.1) h fe3 90 forward current transfer ratio 3076 v ce = 10 v dc; i c = 500 ma dc; pulsed (see 4.5.1) h fe4 50 200 forward current transfer ratio 30 76 v ce = 10 v dc; i c = 1 a dc; pulsed (see 4.5.1) h fe5 15 collector to emitter voltage (saturated) 3071 i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v ce(sat)1 0.2 v dc collector to emitter voltage (saturated) 3071 i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) v ce(sat)2 0.5 v dc base to emitter voltage (saturated) 3066 test condition a; i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v be(sat) 1.1 v dc subgroup 3 high - temperature operation t a = +150 c collect or to emitter cutoff current 3041 bias condition c; v ce = 90 v dc i ces2 10 m a dc low - temperature operation t a = - 55 c forward current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed (see 4.5.1) h fe6 40 subgroup 4 small - si gnal short - circuit forward - current transfer ratio 3206 v ce = 5 v dc; i c = 1 ma dc, f = 1 khz h fe 80 400 magnitude of small - signal short - circuit forward - current transfer ratio 3306 v ce = 10 v dc; i c = 50 ma dc; f = 20 mhz |h fe | 5 20 see footnotes at end of table.
mil - prf - 19500/391g 17 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 4 ? continued input capacitance (output open circuited) 3240 v eb = 0.5 v dc; i c = 0; 100 khz f 1 mhz c ibo 60 pf open circuit output capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz f 1 mhz c obo 12 pf noise figure 3246 v ce = 10 v dc; i c = 100 m a dc; r g = 1 k w ; power bandwidth = 200 hz nf 4 db collector to base time constant v cb = 10 v dc; i c = 10 ma dc; f = 79.8 mhz (see 4.5.2) r' b ,c c 400 ps pulse response see figure 6 t on + t off 30 ns subgroup 5 safe operating area (continuous dc) 3051 t c = 25 c; t = 10 ms, 1 cycle (se e figure 7 ) test 1 2n3019, 2n3019s 2n3057a, 2n3700, 2n3700ub v ce = 10 v dc; i c = 500 ma dc i c = 180 ma dc test 2 2n3019, 2n3019s 2n3057a, 2n3700, 2n3700ub v ce = 40 v dc; i c = 125 ma dc i c = 45 ma dc test 3 2n3019, 2n3019s 2n 3057a, 2n3700, 2n3700ub v ce = 80 v dc; i c = 60 ma dc i c = 22.5 ma dc electrical measurements see group a, subgroup 2 herein see footnotes at end of table.
mil - prf - 19500/391g 18 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol l imit unit method conditions min max subgroups 6 and 7 not applicable 1 / for sampling plan see mil - prf - 19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in table i, group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil - prf - 19500/391g 19 * table ii. group e inspection (all quality levels) ? for qualification only . inspection mil - std - 750 qualification method conditions subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles 45 devices c = 0 hermetic seal fine leak gross leak 1071 electrical measurements see table i, group a, subgroup 2 and table iii herein. subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles. 45 devices c = 0 electrical measurements see table i, group a, subgroup 2 and table iii herein. subgroups 3, 4, 5, 6 and 7 not applicable subgroup 8 reverse stability 1033 condition a for devices 3 400 v condition b for devices < 400 v 45 devices c = 0
mil - prf - 19500/391g 20 table iii. groups b and c delta measurements . 1 / 2 / 3 / step inspection mil - std - 750 symbol limits unit method conditions min max 1. collector - emitter cutoff current 3041 bias condition c; v ce = 90 v dc; pulsed (see 4.5.1) d i ces1 100 percent of initial value or 8 na dc, whichever is greater. 2. forward - current transfer ratio 3076 v ce = 10 v dc; i c = 0.1 ma dc; pulsed (see 4.5.1) d h fe2 25 percent change from initial reading. 3. forward - current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed (see 4.5.1) d h fe1 25 percent change from initial reading. 4. collector - emitter voltage (saturated) 3071 i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) d v ce(sat)1 4 / 50 mv dc change from previous measured value . 1 / the delta measurements for table via (jans) of mil - prf - 19500 are as follows: a. subgroup 4, see table iii herein, step 4. b. subgroup 5, see table iii herein, steps 1 and 3. 2 / the delta measurements for group b, (jan, jantx, and jantxv), see 4.4. 2.2 herein, are as follows: steps 1 and 2 of 4.4.2.2 herein, see table iii herein, steps 1, 3 and 4 . 3/ the delta measurements for table vii (for jans only) of mil - prf - 19500 are as follows: subgroup 6, see table iii herein, steps 1 and 3 . 4 / measured wi thin .125 inch (3.175 mm) from the body of the device.
mil - prf - 19500/391g 21 notes: 1. the rise time (t r ) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. sampling oscilloscope: z in 3 100 k w , c in 12 pf, rise time 2.0 ns. figure 6 . nonsaturated switching - time test circuit .
mil - prf - 19500/391g 22 * * figure 7 . maximum safe operating graph (dc) .
mil - prf - 19500/391g 23 5. packaging 5.1 packaging . for acquisition purposes, th e packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging r equirements. packaging requirements are maintained by the inventory control point's packaging activity within the military department or defense agency, or within the military department's system command. packaging data retrieval is available from the ma naging military department's or defense agency's automated packaging files, cd - rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but i s not mandatory.) 6.1 intended use . the notes specified in mil - prf - 19500 are applicable to this specification. 6.2 acquisition requirements . the acquisition requirements are as specified in mil - prf - 19500. 6.3. suppliers of janhc and jankc die . t he qualified janhc and jankc suppliers with the applicable letter version (example janhca2n3700) will be identified on the qml. die ordering information pin manufacturer 34156 2n3700 janhca2n3700 jankca2n3700 6. 4 qualification . with respect t o products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. t he attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded cont racts or orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center, columbus, attn: dscc/vqe, p.o. box 3990, columbus, oh 43216 - 5000. 6.5 changes from previous issue . the margins of this revision are marked with an asterisk to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notations. bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961 - 2504) nasa - na dla - cc review activities: army - ar, mi, sm navy - as, mc air force ? 19
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8 . in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this fo rm may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) o r to amend contractual requirements. i recommend a change: 1. document number mil - prf - 19500/391g 2. document date 15 july 2002 3. document title semiconductor device, transistor, npn, silicon, low - power types 2n3019, 2n3019s, 2n3057a, 2n3700, and 2n3700ub jan, jantx, jantxv, jans, janhca2n3700 and janhca2n3700. 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submit ter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone com mercial dsn fax email 614 - 692 - 0510 850 - 0510 614 - 692 - 6939 alan.barone@dscc.dla.mil c. address defense supply center columbus, attn: dscc - vac, p.o. box 3990, columbus, oh 43216 - 500 0 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc - lm) 8725 john j. kingman, suite 2533, fort belvoir, va 22060 - 6221 telephone (703) 767 - 6888 dsn 427 - 6888 dd form 1426, feb 1999 (eg) previ ous editions are obsolete whs/dior, feb 99

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